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RF Power Field Effect Transistor LDMOS, 800--1700 MHz, 15W, 26V
1/11/06
Preliminary
MAPL-000817-015C00
Features
Designed for broadband commercial applications up to 1.7GHz * High Gain, High Efficiency and High Linearity * Typical P1dB performance at 960MHz, 26Vdc, CW * Typical Power Output: 16.5W * Gain: 16.5dB * Efficiency: 50% * 10:1 VSWR Ruggedness at 15W, 26Vdc, 960MHz
*
Package Style
MAPL-000817-015C00
Maximum Ratings
Parameter Drain--Source Voltage Gate--Source Voltage Total Power Dissipation @ TC = 25 C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 31.25 -65 to +150 150 Units Vdc Vdc W C C
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 4 Unit C/W
NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed.
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015C00
1/11/06
Preliminary
Characteristic DC CHARACTERISTICS @ 25C Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 30 Adc) Gate Threshold Voltage (Vds = 26 Vdc, Id = 100 mA) Gate Quiescent Voltage (Vds = 26 Vdc, Id = 100 mA) Drain-Source On-Voltage (Vgs = 10 Vdc, Id = 1 A) RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture) (1) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W) Input Return Loss (VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W) Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 100 mA, f = 1670 MHz, POUT = 15 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 100 mA, f = 1670 MHz, POUT = 15 W) Input Return Loss (VDD = 26 Vdc, IDQ = 100 mA, f = 1670 MHz, POUT = 15 W)
Symbol
Min
Typ
Max
Unit
V(BR)DSS VGS(th)
65 2
-- --
-- 5
Vdc Vdc
VDS(Q)
3
--
5
Vdc
VDS(on)
--
0.25
--
Vdc
GP EFF () IRL
-- -- --
17 50 -10
-- -- --
dB % dB
No Degradation In Output Power Before and After Test -- -- -- 12.5 50 -10 -- -- -- dB % dB
GP EFF () IRL
(1)
Device specifications obtained on a Production Test Fixture.
2
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015C00
1/11/06
Preliminary
C1,C7 Tantalum Surface Mt. Cap., 100 F, 35 V C2,C8 Ceramic Chip Capacitor, 0.1 F C3,C9 Ceramic Chip Capacitor, 1000 pF C4,C10,C12 Chip Capacitor, 33 pF ATC100A C5 Chip Capacitor, 10.0 pF ATC100A C6 Chip Capacitor, 11.0 pF ATC100A C11 Chip Capacitor, 8.2 pF ATC100A J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 18 nH, CoilCraft 1206CS L2 Inductor, 27 nH, CoilCraft 1206CS P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPL-000817-015C00 R1 Chip Resistor (0805), 10k Ohm
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
Distributed Microstrip Element, 0.125" x 0.046" Distributed Microstrip Element, 0.506" x 0.046" Distributed Microstrip Element, 0.080" x 0.046" Distributed Microstrip Element, 0.020" x 0.178" Distributed Microstrip Element, 0.253" x 0.178" Distributed Microstrip Element, 0.315" x 0.178" Distributed Microstrip Element, 0.312" x 0.046" Distributed Microstrip Element, 0.613" x 0.046" Distributed Microstrip Element, 0.125" x 0.046"
PC Board Rogers (RO4350) Duroid, 0.020:" thick, Er=3.5, 1 Oz Copper Both Sides
Figure 1. 920--960 MHz Test Fixture Schematic
Figure 2. 920--960 MHz Test Fixture Component Layout
3
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015C00
1/11/06
Preliminary
C1,C6 Tantalum Surface Mt. Cap., 100 F, 35 V C2,C7 Ceramic Chip Capacitor, 0.1 F C3,C8 Ceramic Chip Capacitor, 1000 pF C4,C9,C12 Chip Capacitor, 33 pF ATC100A C5 Chip Capacitor, 4.7 pF ATC100A C10 Chip Capacitor, 3.0 pF ATC100A C11 Chip Capacitor, 3.3 pF ATC100A J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 18 nH, CoilCraft 1206CS L2 Inductor, 27 nH, CoilCraft 1206CS P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPL-000817-015C00 R1 Chip Resistor (0805), 10k Ohm
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
Distributed Microstrip Element, 0.125" x 0.046" Distributed Microstrip Element, 0.533" x 0.046" Distributed Microstrip Element, 0.080" x 0.026" Distributed Microstrip Element, 0.127" x 0.046" Distributed Microstrip Element, 0.146" x 0.046" Distributed Microstrip Element, 0.077" x 0.178" Distributed Microstrip Element, 0.211" x 0.178" Distributed Microstrip Element, 0.029" x 0.178" Distributed Microstrip Element, 0.920" x 0.046" Distributed Microstrip Element, 0.125" x 0.046"
PC Board Rogers (RO4350) Duroid, 0.020:" thick, Er=3.5, 1 Oz Copper Both Sides
Figure 3. 1620-1670 MHz Test Fixture Schematic
Figure 4. 1620--1670 MHz Test Fixture Component Layout
4
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015C00
1/11/06
Preliminary
Figure 5. MAPL-000817-015C00 Pin Connections
5
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015C00
1/11/06
Preliminary
20 20 19 19 18 18
CW, 26V, IDQ=100mA CW, 26V, IDQ=100mA
80 80 70 70 60 60 50 50 40 40 30 30
Gain (dB) Gain (dB)
17 17 16 16 15 15 14 14 13 13 12 12 30 30 Gain 960 MHz Gain 960 MHz Gain 925 MHz Gain 925 MHz Eff. 960MHz Eff. 960MHz Eff. 925 MHz Eff. 925 MHz 32 32 34 34 36 36 38 38 40 40 42 42
20 20 10 10 0 0
44 44
Pout (dBm) Pout (dBm)
Graph 1. 925, 960MHz: CW Power Gain and Drain Efficiency vs. Output Power
20 20 -10 -10 -20 -20 -30 -30
25 25
Pout (dBm) Pout (dBm)
30 30
35 35
40 40
26V, IDQ=100mA, 100kHz Tone Spacing 26V, IDQ=100mA, 100kHz Tone Spacing
IMD (dBc) IMD (dBc)
-40 -40 -50 -50 -60 -60 -70 -70
IMD3 (960 MHz) IMD3 (960 MHz) IMD5 (960MHz) IMD5 (960MHz) IMD3(925MHz) IMD3(925MHz) IMD5(925MHz) IMD5(925MHz)
Graph 2. 925, 960 MHz: 2 Tone Intermodulation Distortion vs. Output Power
6
Drain Efficiency (%) Drain Efficiency (%)
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015C00
1/11/06
Preliminary
20 20 18 CW, 26V, IDQ=100mA 18 CW, 26V, IDQ=100mA 16 16 14 14
60 60 55 55
45 45 40 40 35 35 30 30
Gain (dB) Gain (dB)
12 12 10 10 88 66 44 22 00 30 30 32 32 34 34 36 36 38 38
Gain 1670MHz Gain 1670MHz Gain 1620MHz Gain 1620MHz Eff. 1670MHz Eff. 1670MHz Eff. 1620MHz Eff. 1620MHz
40 40 42 42
25 25 20 20 15 15 10 10
Pout (dBm) Pout (dBm)
Graph 3. 1620, 1670MHz: CW Power Gain and Drain Efficiency vs. Output Power
00 -10 -10 -20 -20
26V, 1670MHz, 100kHz Tone Spacing 26V, 1670MHz, 100kHz Tone Spacing
IMD3 100mA IMD3 100mA IMD5 100mA IMD5 100mA IMD3 160mA IMD3 160mA IMD5 160mA IMD5 160mA
IMD (dBc) IMD (dBc)
-30 -30 -40 -40 -50 -50 -60 -60 -70 -70 33 33
34 34
35 35
36 36
37 37
38 38
39 39
Pout Avg (dBm) Pout Avg (dBm)
Graph 4. 1620, 1670MHz: 2 Tone Intermodulation Distortion vs. Output Power
7
Drain Efficiency (%) Drain Efficiency (%)
50 50
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015C00
1/11/06
Preliminary
Package Dimensions Test Fixture Circuit Dimensions
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information.
8 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

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